Effective potential for composite operators and for an auxiliary scalar field in a Nambu-Jona-Lasinio model

We derive the effective potentials for composite operators in a Nambu-Jona-Lasinio (NJL) model at zero and finite temperature and show that in each case they are equivalent to the corresponding effective potentials based on an auxiliary scalar field. The both effective potentials could lead to the same possible spontaneous breaking and restoration of symmetries including chiral symmetry if the momentum cutoff in the loop integrals is large enough, and can be transformed to each other when the Schwinger-Dyson (SD) equation of the dynamical fermion mass from the fermion-antifermion vacuum (or thermal) condensates is used. The results also generally indicate that two effective potentials with the same single order parameter but rather different mathematical expressions can still be considered physically equivalent if the SD equation corresponding to the extreme value conditions of the two potentials have the same form.Comment: 7 pages, no figur

Determination of f+K(0)f_+^K(0) and Extraction of ∣Vcs∣|V_{cs}| from Semileptonic DD Decays

By globally analyzing all existing measured branching fractions and partial rates in different four momentum transfer-squared $q^2$ bins of $D\to Ke^+\nu_e$ decays, we obtain the product of the form factor and magnitude of CKM matrix element $V_{cs}$ to be $f_+^K(0)|V_{cs}|=0.717\pm0.004$. With this product, we determine the $D\to K$ semileptonic form factor $f_+^K(0)=0.737\pm0.004\pm0.000$ in conjunction with the value of $|V_{cs}|$ determined from the SM global fit. Alternately, with the product together with the input of the form factor $f_+^K(0)$ calculated in lattice QCD recently, we extract $|V_{cs}|^{D\to Ke^+\nu_e}=0.962\pm0.005\pm0.014$, where the error is still dominated by the uncertainty of the form factor calculated in lattice QCD. Combining the $|V_{cs}|^{D_s^+\to\ell^+\nu_\ell}=1.012\pm0.015\pm0.009$ extracted from all existing measurements of $D^+_s\to\ell^+\nu_\ell$ decays and $|V_{cs}|^{D\to Ke^+\nu_e}=0.962\pm0.005\pm0.014$ together, we find the most precisely determined $|V_{cs}|$ to be $|V_{cs}|=0.983\pm0.011$, which improves the accuracy of the PDG'2014 value $|V_{cs}|^{\rm PDG'2014}=0.986\pm0.016$ by $45\%$

Thermoelectric Properties of Silicon Carbide Nanowires with Nitrogen Dopants and Vacancies

The thermoelectric properties of cubic zincblend silicon carbide nanowires (SiCNWs) with nitrogen impurities and vacancies along [111] direction are theoretically studied by means of atomistic simulations. It is found that the thermoelectric figure of merit ZT of SiCNWs can be significantly enhanced by doping N impurities together with making Si vacancies. Aiming at obtaining a large ZT, we study possible energetically stable configurations, and disclose that, when N dopants locate at the center, a small number of Si vacancies at corners are most favored for n-type nanowires, while a large number of Si vacancies spreading into the flat edge sites are most favored for p-type nanowires. For the SiCNW with a diameter of 1.1 nm and a length of 4.6 nm, the ZT value for the n-type is shown capable of reaching 1.78 at 900K. The conditions to get higher ZT values for longer SiCNWs are also addressed.Comment: 9 pages, 10 figure